1·The method can avoid multicrystal silicon residue between the sidewall of the dielectric layer and the dielectric layer, thereby preventing leakage current.
本方法避免在介电层的侧壁以及介电层之间产生多晶硅残留，防止漏电流发生。
2·Project Contents: Multicrystal silicon is produced from chloridized industrial silica fume through the extraction with physical and chemical method and under special conditions.
建设内容：多晶硅是由工业硅粉氯化，采用物理、化学方法提炼和特定条件下还原生产的。